Emerging Technology 3-D Transistors Essay Example | Topics and Well Written Essays - 1500 words

Emerging Technology 3-D Transistors - Essay ExampleIt is in line with this that manufacturers of memory cadres, particularly, Intel have been concerned with ways of enhancing the performance level of transistors that are mounted on memory cells for various mobile devices, particularly hopeful phones. The unused technology that has emerged from Intel is 3-D transistors. 3-D transistors have been said to be a technical form of Tri-Gate that has been set to advance over the traditional cardinal-dimension gate, which was in flat construction. With the advancement, the two-dimensional planar is replaced with three-dimensional te fin that ensures that the silicon substrate is raised up vertically. This emerging technology has been said to be necessary because it is no longer becoming possible to cram transistors in two-dimensional gates to make the Moores Law of doubling the number of transistors on a silicon device every two years possible. Keywords mainframe transistors 3-D tran sistors tri-gate mobile device memory cell Moores Law fin silicon advancement dimensional chips I. INTRODUCTION The cell phone industry has grown to heights that can be described as the most phenomenal in decades since the introduction of the technology. There are indeed a number of factors that have aided in the rapid growth of the cell phone industry, particularly imputable to the efficiency and effectiveness of the various components of technologies that come together to make up the holistic cell phone industry. One of such components of technologies that cannot be overlooked is the performances of cell phones that have made them versatile to performing a number of functions, including advanced memory cells. It would be noted however that the making and functionality of these memory cells are ever so based on the mounting of transistors (Han and Wentzlo, 2010). these transistors have always been in place to enhance energy efficiency and monitor the speed of processors, ensuring that the cell phones and other mobile technology devices can undertake processes input in them quite easily (Joyner, Zarkesh-Ha, and Meindl, 2001). With this function of transistors in mobile devices, it is very clear to note that these mobile devices including new forms of smart phones cannot be integrated with component array of functionalities if they do not have an effective transistor base to regulate energy efficiency and processor speed (Apte, Doering, and Gargini, 2007). It is in line with this that the focus of most memory cell makers has been on the need to enhance the efficacy of transistors. This paper serves as a passel paper to critically analyze the works of existing reviewers on a particular new technology in the line of transistors, which are 3-D transistors. Intels 3-D transistors are used as a model. II. SURVEY FINDINGS A. Intels Motivation to go 3-D Since the emergence of this 3-D transistors idea, transistors were generally mounted on 2-D platforms, called the 2-D planer 2-D gate (Dietrich and Haase, 2012). Various researchers have therefore tried to find out what the motivation of Intel to go 3-D could be. In this, it has been identified that the major motivation behind the emerging technology of 3-D transistors is Moores Law (Davis et al, 2005). Chang, Zuo, Wang, Yu, and Boning (2012) notes that Moores Law states that the number of transistors per chip will double roughly every two years. By implication, the memory cell that houses the chips must be in a position to